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In the above PMOS inverter circuit VDD=5V and RD=20k For p-channel MOSFET condunction parameter Kp=0.3mA/V2 and threshold voltage VTP=0.5V. If the input voltage v1=5V. Find the ouput voltage vO in V. Find the drain current iD in mA. In the above circuit VDD=5V and for n-channel MOSFET threshold voltage VTN=1V, conduction parameter Kn=10A/V2. If the transition input voltage is vI=2V, find out the value of RD in k ? Save In the above NMOS NOR gate circuit RD=1k and for both n-channel MOSFETs conduction parameter Kn=2mA/V2, threshold voltage VTN=0.5V. Remember that voltage swing for both inputs V1,V2 are in between 0V to 2.5V. Find the maximum power dissipation in mW. In this case, find the output voltage VO in V