Question: Please include plot 4.) Compare the concentration profile of arsenic impurities in a 1.2 meter long Si ingot grown by (a.) the CZ technique and

Please include plotPlease include plot 4.) Compare the concentration profile of arsenic impurities in

4.) Compare the concentration profile of arsenic impurities in a 1.2 meter long Si ingot grown by (a.) the CZ technique and (b.) the FZ technique. Show this comparison in the form of a plot. Assume the starting concentration of the feed in both cases be 21018cm3. Also assume the zone length for the FZ growth is 6cm. (a.) Plot concentration on a log scale. Assume e=. Label your plots. 5.) What is the effective partition coefficient, e, of carbon (=0.07) in Si given the following pull conditions: pull rate of 1.5mm/min, rotation rate of 3rpm,v= 3.5103cm2/s, and D=2105cm2/s

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