Please include sufficient detailed work and steps. Q$2$: An NMOS transistor, operating in the linear$-$resistance region with V$\_($DS$)=50$mV$,$ is found to conduct $25\backslash$mu A

for V$\_($GS$)=1$V and $50\backslash$mu A for V$\_($GS$)=1\mathrm{.}5$V$.$ What is the apparent value of threshold voltage V$\_($t$)?$ If k$\_($n$)^(\text{'})=50\backslash$mu $($A$)/($V$)2,$

what is the device $($W$)/($L$)$ ratio? What current would you expect to flow with V$\_($GS$)=2$V and V$\_($DS$)=0\mathrm{.}1$V $?$ If the

device is operated at V$\_($GS$)=2$V$,$ at what value of V$\_($DS$)$ will the drain end of the MOSFET channel just reach

pinch$-$off, and what is the corresponding drain current?