Please mark yes or no for each comment. If you mark $$no$,$ please correct them. $($a$)$ Ion distribution after the ion implantation will be the same regardless of the crystal orientation. $($b$)$ Dopant diffusion during the annealing after the ion implantation should be taken into account to estimate the ion distribution. $($c$)$ Even for MOSFET fabrication, ion implantation can be used many times. $($d$)$ Junction depth should be shallow to follow the scaling rule, so the ion implantation for deep junction formation will be not necessary. $($e$)$ Thin film deposition is a very important process step in CMOS process flows and vacuum level is one of the most important parameters during the film deposition. $($f$)$ Wet etching always shows isotropic etching behaviors because it is based on the chemical reaction, which typically does not show direction dependence. $($g$)$ Ion bombardment is typically used to remove the polymer layer, which is formed by the chemical reaction between the target layer for etching and reactive ions during the etching.