Please SOLVE USING MULTISIM

Please SOLVE USING MULTISIM

Use Virtual NMOS. For capacitors, just make them really large (1 F!) 7th Edition *5.60 -- You can verify with hand analysis, but it's not required. This is a current source that we'll talk more detail about next semester. Just realize FETs in series MUST have the same drain currents! Get V2, and 12 for both cases. SIM *5.60 For the devices in the circuit of Fig. P5.60, VI = 1V, a = 0, u.Co = 50 mA/V?, L = 1 um, and W = 10 pm. Find V, and I.. How do these values change if Q, and Q. are made to have W = 100 pm? +5V Q2 1o Q3 Q = Figure P5.60 Use Virtual NMOS. For capacitors, just make them really large (1 F!) 7th Edition *5.60 -- You can verify with hand analysis, but it's not required. This is a current source that we'll talk more detail about next semester. Just realize FETs in series MUST have the same drain currents! Get V2, and 12 for both cases. SIM *5.60 For the devices in the circuit of Fig. P5.60, VI = 1V, a = 0, u.Co = 50 mA/V?, L = 1 um, and W = 10 pm. Find V, and I.. How do these values change if Q, and Q. are made to have W = 100 pm? +5V Q2 1o Q3 Q = Figure P5.60