Question: pn Junction -- I-V Characteristics Consider a pnSi step junction diode with p-side doping NA = 101 cm (uncompensated) and area A = 104 cm?

pn Junction -- I-V Characteristics Consider a

pn Junction -- I-V Characteristics Consider a pnSi step junction diode with p-side doping NA = 101 cm" (uncompensated) and area A = 104 cm? The electron recombination lifetime in the quasi-neutral p-side region is t = 10-s. a) Compute the ideal diode current at T= 300K for 1) VA= -5 V 1) VA = -0.1 V 111) VA = +0.1 V iv) VA = +0.5 V Hint: To determine the minority carrier diffusion lengths, use the values of carrier mobilities from Figure 3.5a in Pierret. b) Based on your answers in parts (a), sketch the diode 1-V characteristics for T=300K. Describe the key changes in the diode 1-V characteristic with increasing temperature. Silicon "T= 300 K Electrons 1000 Holes Hoor Hp (cm?NV-see) NA or No (cm- 1x 10 2 100 Tx 1015 2 14 (cm/V-sec) 1358 461 1357 460 1352 459 1345458 192455 1298 1248 1165 419 986 378 801 331 432 1 x 1016 2 5 1x1017 10 1014 1015 1018 1016 1017 NA or No (cm- Flaure 3.5 (a) pn Junction -- I-V Characteristics Consider a pnSi step junction diode with p-side doping NA = 101 cm" (uncompensated) and area A = 104 cm? The electron recombination lifetime in the quasi-neutral p-side region is t = 10-s. a) Compute the ideal diode current at T= 300K for 1) VA= -5 V 1) VA = -0.1 V 111) VA = +0.1 V iv) VA = +0.5 V Hint: To determine the minority carrier diffusion lengths, use the values of carrier mobilities from Figure 3.5a in Pierret. b) Based on your answers in parts (a), sketch the diode 1-V characteristics for T=300K. Describe the key changes in the diode 1-V characteristic with increasing temperature. Silicon "T= 300 K Electrons 1000 Holes Hoor Hp (cm?NV-see) NA or No (cm- 1x 10 2 100 Tx 1015 2 14 (cm/V-sec) 1358 461 1357 460 1352 459 1345458 192455 1298 1248 1165 419 986 378 801 331 432 1 x 1016 2 5 1x1017 10 1014 1015 1018 1016 1017 NA or No (cm- Flaure 3.5 (a)

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