Problem $08\mathrm{.}006-$ The behavior of the charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junction

Identify the true statements about the behavior of charge carriers and ionized dopant atoms in the vicinity of a semiconductor pn junction that causes the potential $($energy$)$ barrier, which tends to prevent the charge carriers from crossing the junction.$($Check all that apply.$)$

Check All That Apply

If a conduction band free electron in the n material tries to cross into the p material, it encounters and is repelled by the net negative charge in the depleted part of the p material.

If a conduction band free electron in the n material tries to cross into the p material, it encounters and is repelled by the net negative charge in the depleted part of the p material.

If a conduction band free electron in the n material tries to cross into the p material, it encounters and is repelled by the net positive charge in the depleted part of the p material.

If a conduction band free electron in the n material tries to cross into the p material, it encounters and is repelled by the net positive charge in the depleted part of the p material.

If a valence band hole in the p material tries to cross into the the n material, it encounters and is repelled by the net negative charge in the depleted part of the n material.

If a valence band hole in the p material tries to cross into the the n material, it encounters and is repelled by the net negative charge in the depleted part of the n material.

If a valence band hole in the p material tries to cross into the the n material, it encounters and is repelled by the net positive charge in the depleted part of the n material.