Question: Problem - 2 Consider a 3 - input dynamic NAND gate. The gate is designed with NMOS devices of Vth ( = 0 .

Problem-2
Consider a 3-input dynamic NAND gate. The gate is designed with NMOS devices of Vth \(=0.5\mathrm{~V}\). The capacitance of the all intermediate nodes in the pull-down network is 25 fF . The load capacitance is 100 fF . What is the maximum possible voltage drop at the output due to charge sharing in the evaluation mode?
Problem - 2 Consider a 3 - input dynamic NAND

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