Problem $2$

If the evaporation source is very far from the wafer, we can treat the evaporation fluxes to be uniform and parallel. The following contact opening has vertical $Si{O}_2$ sidewalls and the evaporating flux is making an angle $30$ with respect to the normal of the wafer's surface. If the film deposition rate is $1000\frac{}{m}in,$ sketch the cross$-$sectional profile of the film over the SiO $2$ and Si after $($a$)1$ min $,$ and $($b$)2$ min $.$ The SiO$2$ step height is $5000$ and the contact opening is $2m.$ Dimensions of your sketches have to be proportional.