Problem 2 The concentration of charge carriers in an intrinsic semiconductor was measured as a function...

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Problem 2 The concentration of charge carriers in an intrinsic semiconductor was measured as a function of temperature and had the following values: T [K] 300 330 360 390 n [cm 1.23 10 5.218 100 1.199 1012 1.717-1013 (a) Assume the bandgap E, of this material to be temperature independent. Show that the combination f(T) In ((-)"). To=300 K, is proportional to the difference of the inverse temperatures 1/T1/To. In other words, = show that f(T) A (-) and find how the parameter A is related to the bandgap Eg. (b) Use your result from part (a) and the experimental data provided in the table to find the numerical value of the parameter A (in Kelvins) and the bandgap E. (c) Suppose now that the bandgap decreases linearly with temperature according to = E(T) Ego C(T-To) Ego E,(To). . Is it possible to determine the parameters Ego and C from the experimental data provided? If C = 0.001 eV/K, what is Ego? Problem 2 The concentration of charge carriers in an intrinsic semiconductor was measured as a function of temperature and had the following values: T [K] 300 330 360 390 n [cm 1.23 10 5.218 100 1.199 1012 1.717-1013 (a) Assume the bandgap E, of this material to be temperature independent. Show that the combination f(T) In ((-)"). To=300 K, is proportional to the difference of the inverse temperatures 1/T1/To. In other words, = show that f(T) A (-) and find how the parameter A is related to the bandgap Eg. (b) Use your result from part (a) and the experimental data provided in the table to find the numerical value of the parameter A (in Kelvins) and the bandgap E. (c) Suppose now that the bandgap decreases linearly with temperature according to = E(T) Ego C(T-To) Ego E,(To). . Is it possible to determine the parameters Ego and C from the experimental data provided? If C = 0.001 eV/K, what is Ego?