Problem $4$: NMOS MOSFET $(0$ to $20$ points$)$

In each problem make sure to explain the idea of your solution, include new schematics, and show all the computational steps.

IRF$150$

$K_p=20\mathrm{.}53u$

$W=0\mathrm{.}3$

$L=2u$

Vto$=2\mathrm{.}831$

$VA=100V$

Figure $4$: NMOS MOSFET Amplifier schematic

$($a$)$ Run a DC bias on the NMOS amplifier in Figure $4$ and annotates the voltages and currents.

$($b$)$ Measure the voltage gain of the NMOS amplifier in Figure $4$ in two ways $-$ using AC Sweep and using Time Domain Transient.

$($c$)$ Referring to Figure $4($above$),$ an NMOS amplifier is given. Assume the NMOS is in saturation. Calculate $($on paper$)$ the DC parameters $I_D$ and $V_{DS}$ and compare with simulation. Note that the NMOS $($in PSPICE$)$ has the drain attached to the $9\mathrm{.}5$ V power supply.

$($d$)$ Calculate $($on paper$)$ the voltage gain $($Vout$1/$Vin$1)$ of the amplifier in Figure $4$ and compare with simulation results