Problem $5(15\%)$

An n$-$channel MOSFET has I$\_($D$($ sat $))$ of $2\backslash$times $10^(-4)$A$,$V$\_($DS$($ sat $))$ of $4$ V $,$ and V$\_($T$)$ of $0\mathrm{.}8$ V $.$

$($a$)$ Determine the gate voltage

$($b$)$ Determine the conduction parameter $($W$\_(\backslash$mu $)$C$\_($ox$))/(2)$L$.$

$($c$)$ Calculate I$\_($D$)$ when V$\_($G$)=2$V and V$\_($DS$)=2$V

$($d$)$ Calculate I$\_($D$)$ when V$\_($G$)=3$V and V$\_($DS$)=1$V

$($e$)$ Sketch the inversion charge density and depletion region through the channel in Part $($c$)$ and

Part $($d$).$