Question: Problem 5 . 8 : Thermal velocity and mean free path in GaAs Given that the electron effective mass me m _ e ^ *

Problem 5.8:
Thermal velocity and mean free path in GaAs
Given that the electron effective mass mem_e^*me for GaAs is 0.067me0.067m_e0.067me, calculate the thermal velocity of the conduction band (CB) electrons. The electron drift mobility e\mu_ee depends on the mean free time e\tau_ee between electron scattering events (between electrons and lattice vibrations). Given:
e=ee/meande=8500cm2V1s1forGaAs,\mu_e = e \tau_e / m_e^*\quad \text{and}\quad \mu_e =8500\,\text{cm}^2\,\text{V}^{-1}\,\text{s}^{-1}\,\text{for GaAs},e=ee/meande=8500cm2V1s1forGaAs,
calculate e\tau_ee, and hence the mean free path \ell of CB electrons.
How many unit cells is \ell if the lattice constant aaa of GaAs is 0.565nm0.565\,\text{nm}0.565nm?
Calculate the drift velocity vd=eEv_d =\mu_e \mathcal{E}vd=eE of the CB electrons in an applied field E=104V/m\mathcal{E}=10^4\,\text{V/m}E=104V/m.
What is your conclusion?

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