Problem $8\mathrm{.}14$ Consider a GaAs n$-$channel MESFET at $300$ K with the following parameters: Schottky barrier height, b $=0\mathrm{.}8$ V Electron mobility, n $=6000$ cm$2/$ V $$ s Channel width, Z $=25$ m Channel length, L $=1\mathrm{.}0$ m Channel depth, h $=0\mathrm{.}25$ m Channel doping, Nd $=1\mathrm{.}0\backslash$times $1017$ cm$3($a$)$ Calculate the gate bias VGS $=$ VT needed for the device to just turn off. $($b$)$ Calculate VD$($sat$)$ for gate biases of VGS $=1\mathrm{.}5$ V and VGS $=3\mathrm{.}0$ V$.($c$)$ Calculate the saturation drain current for the cases considered in part b