Question: Problem 8 . 3 Consider an n - channel Si JFET at 3 0 0 K with the following parameters: p + - doping, Na

Problem 8.3 Consider an n-channel Si JFET at 300 K with the following parameters: p+-doping, Na =5\times 1018 cm3 n-doping, Nd =1017 cm3 Channel thickness, h =0.5 m (a) Calculate the internal pinch-off for the device. (b) Calculate the gate bias required to make the width of the undepleted channel 0.25 m

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