Problem $8\mathrm{.}5$ An n$-$type In$0\mathrm{.}53$Ga$0\mathrm{.}47$As epitaxial layer doped at $1016$ cm$3$ is to be used as a channel in a FET. A decision is to be made whether the JFET or MESFET technology is to be used for the device. In the JFET technology a p$+$ region can be made with a doping of $5\backslash$times $1017$ cm$3.$ In the MESFET technology a Schottky barrier with a height of $0\mathrm{.}4$ V is available. Which technology will you use? Give reasons considering gate isolation issues. $($R $=5$ Acm$2$K$2$; Dp $=20$ cm$2/$s; Dn $=50$ cm$2/$s; Ln $=5$ m;Lp $=5$ m$.)$