Problem $8\mathrm{.}6$ Consider a p$-$channel Si JFET with the following parameters: p$-$doping, Na $=5\backslash$times $1016$ cm$3$ n$+-$doping, Nd $=5\backslash$times $1018$ cm$3$ Channel depth, h $=0\mathrm{.}25$ m $($a$)$ Calculate the internal pinch off for the device as well as the gate bias needed for pinch off. $($b$)$ Calculate the width of the undepleted channel for gate biases of VGS $=1$ V and VGS $=2$ V for VDS $=0$