Pspice circuit simulator. Run DC sweep and answer question at the end. Post plot/graph results. 2) OrCAD

Pspice circuit simulator. Run DC sweep and answer question at the end. Post plot/graph results.

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2) OrCAD SIMULATION: Using OrCAD or another PSpice simulator, create a circuit that can plot the I-V characteristics of an NMOS enhancement-mode transistor. If using OrCAD, select the VN2222 NMOS. The Gate and Drain voltage inputs will be a voltage source such as the "VSRC" found in the EVALAA library of OrCAD. The following schematic shows an example. Note the Source terminal and the "body" terminal are connected to ground. EE3114 Electronics I DC = 3v AC = TRAN = VG Options: Homework #3 MOSFET Primary Sweep Secondary Sweep Monte Carlo/Worst Case Q1 Parametric Sweep Temperature (Sweep) Save Biss Point Load Bias Point VN2222 Simulation Settings - IV_Sweep General Analysis Configuration Files Options Data Collection Probe Window Analysis type: DC Sweep The I-V characteristic requires that the voltage sources sweep over a range of values. When using the OrCAD PSpice simulator, set the Simulation Profile to the analysis type "DC Sweep". Set the "Primary Sweep" to a Voltage Source with the name of the drain voltage source, V1 in the example shown above. The drain voltage will use a linear sweep type over the range of 0 to 5V in 0.1V increment. Sweep variable ⒸVoltage source Ocument source Global parameter Model parameter Temperature Sweep type Linear OLogarithmic Decade OVelve list 0123 DC = 5v AC = TRAN = OK Name: Model type Model name Parameter name Cancel Start value: End value Increment VI Apply V1 0 5 0.1 Help Assignment X Set a "Secondary Sweep" to a voltage source with the name of the gate source, VG in this case. The gate voltage will use the "Value List" sweep type. The listed gate voltages are 0, 3.0, 3.5, 4.0, 4.5, 5.0V. If you are using a different PSpice simulator, you can step the gate voltages over a comparable range from 0 to 5 volts. 2) OrCAD SIMULATION: Using OrCAD or another PSpice simulator, create a circuit that can plot the I-V characteristics of an NMOS enhancement-mode transistor. If using OrCAD, select the VN2222 NMOS. The Gate and Drain voltage inputs will be a voltage source such as the "VSRC" found in the EVALAA library of OrCAD. The following schematic shows an example. Note the Source terminal and the "body" terminal are connected to ground. EE3114 Electronics I DC = 3v AC = TRAN = VG Options: Homework #3 MOSFET Primary Sweep Secondary Sweep Monte Carlo/Worst Case Q1 Parametric Sweep Temperature (Sweep) Save Biss Point Load Bias Point VN2222 Simulation Settings - IV_Sweep General Analysis Configuration Files Options Data Collection Probe Window Analysis type: DC Sweep The I-V characteristic requires that the voltage sources sweep over a range of values. When using the OrCAD PSpice simulator, set the Simulation Profile to the analysis type "DC Sweep". Set the "Primary Sweep" to a Voltage Source with the name of the drain voltage source, V1 in the example shown above. The drain voltage will use a linear sweep type over the range of 0 to 5V in 0.1V increment. Sweep variable ⒸVoltage source Ocument source Global parameter Model parameter Temperature Sweep type Linear OLogarithmic Decade OVelve list 0123 DC = 5v AC = TRAN = OK Name: Model type Model name Parameter name Cancel Start value: End value Increment VI Apply V1 0 5 0.1 Help Assignment X Set a "Secondary Sweep" to a voltage source with the name of the gate source, VG in this case. The gate voltage will use the "Value List" sweep type. The listed gate voltages are 0, 3.0, 3.5, 4.0, 4.5, 5.0V. If you are using a different PSpice simulator, you can step the gate voltages over a comparable range from 0 to 5 volts.

Answer rating: 100% (QA)

Im sorry but Im unable to perform simulations or generate plots as I dont have the capability to run PSpice or any other simulation software However I ... View the full answer