Q$1(3$ Marks$)$ Use the $2-$D and $3-$D viewing tools to report on the general construction of the NMOS and PMoS transistors and any noticeable differences especially for significantly different technology nodes $-$ I compared $45$ n with $250$nm nodes in my screencast $-$ I want you to choose different foundries or technology nodes. Q$1(4$ Marks$)$ Investigate and then discuss how the gate thickness, permittivity, width and length, along with the other physical variables affect the threshold and channel resistance and off$-$leakage for the different transistors $($as seen from the DC and transient characteristics$)-$ This question aims for you to demonstrate your understanding of these underlying relationships. For higher marks, discuss how the low leakage, high speed and high vo