Q$5)$ Consider a Silicon at $T=300K(25C)$

$($a$)$ Using the given graph below, determine electron mobility if silicon is doped with ${10}^{16}c{m}^{-3}$ donor atoms

$($b$)$ Using part $($a$),$ determine the electron diffusion coefficient

$($c$)$ Given hole diffusion coefficient is $D_p=8c\frac{m^2}{s},$ determine the hole mobility

$($d$)$ Using part $($c$),$ deduce acceptor impurity concentration