Question: Question 1 - 1 5 Marks 1 . 1 The movement of partial dislocations during application of stress tends to create the intrinsic stacking faults
Question Marks
The movement of partial dislocations during application of stress tends to create the
intrinsic stacking faults which raise the energy of the crystal. Briefly discuss three sources
of energy that creates the stacking fault energy.
Use relevant dislocation theories and explain why the strength of metals drops at higher
temperatures
Why will cross slip tends to be difficult in HCP materials
Why is it necessary for dislocations to have a smallest Burgers vector as possible
Explain why substitutional atoms prefer to accommodate themselves near dislocations
cores
Question marks
Find the partial dislocations formed from a on the in the FCC crystal
structure, you need to show the plane, slip directions and the directions of partials in a neat
diagram.
Prove whether the reaction obtain in will occur.
Suppose a dislocation line coincide with one of the partials determine in do you
think it will be able to cross slip?
A single crystalline metal rod of m diameter is uniaxially loaded with a force of
N in direction. Given slip system as: and critical resolved shear
stress for this slip system as MPa Determine whether yielding will occur
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