Question: Question 1 - 1 5 Marks 1 . 1 The movement of partial dislocations during application of stress tends to create the intrinsic stacking faults

Question 1-15 Marks
1.1 The movement of partial dislocations during application of stress tends to create the
intrinsic stacking faults which raise the energy of the crystal. Briefly discuss three sources
of energy that creates the stacking fault energy. (6)
1.2 Use relevant dislocation theories and explain why the strength of metals drops at higher
temperatures (2).
1.3 Why will cross slip tends to be difficult in HCP materials (2).
1.4 Why is it necessary for dislocations to have a smallest Burgers vector as possible (2).
1.5 Explain why substitutional atoms prefer to accommodate themselves near dislocations
cores (3)
Question 2-45 marks
2.1 Find the partial dislocations formed from (a/2)01bar(1) on the (?bar1bar1bar(1) in the FCC crystal
structure, you need to show the plane, slip directions and the directions of partials in a neat
diagram.
2.2 Prove whether the reaction obtain in 2.1 will occur.
2.3 Suppose a dislocation line coincide with one of the partials determine in 2.1, do you
think it will be able to cross slip?
2.4 A single crystalline metal rod of 0.015 m diameter is uni-axially loaded with a force of
2120.57 N in [1?bar(1)0 direction. Given slip system as: (1bar1bar(1))[0bar(1)1] and critical resolved shear
stress for this slip system as 6 MPa . Determine whether yielding will occur (5).
Question 1 - 1 5 Marks 1 . 1 The movement of

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