Question 1

MOSFET is used as current source. Bipolar crossing point semiconductor moreover goes probably as incredible current source.

Question 2

Growing the breaking point voltage, prompts little spillage current when executed and diminishes current stream when turned on.

Question 3

In MOSFET, around there, when Vds > (Vgs - Vth), the redirect presses off that is the channel current at the channel fans out.

Question 4

In direct area of MOSFET, the channel is uniform and slender. This is the obsession appointment.

Question 5

The current Ids remains really predictable as Vds developments in the drenching locale.

Question 6

nMOS utilization; The edge voltage for nMOS depletion meant as Vtd is negative.

Question 7

The condition for drenching is Vds = Vgs - Vt since now IR drop in the channel moves toward the reasonable way to channel voltage at the channel.

Question 8

In non inundated or resistive region, Vds lesser than Vgs - Vt where Vds is the voltage among channel and source, Vgs is the entryway source voltage and Vt is the edge voltage.

Question 9

The value of compactness of proton or opening at room temperature is 240 cm2/V sec. This gives the extent of how fast an electron can move.

Question 10

It is given as Vds/L; Electric field(Eds) can be given as the extent of Vds and L. Eds is the electric field produced using channel to source due to volta Vds.