Question: Question 2 0/1 point An abrupt silicon pn junction at zero bias has dopant concentrations of Na-5 X 1017 cm3 and Na-1X 1017 cm3
Question 2 0/1 point An abrupt silicon pn junction at zero bias has dopant concentrations of Na-5 X 1017 cm3 and Na-1X 1017 cm3 at T-300 K. Calculate the Fermi level on each side of the junction with respect to the intrinsic Fermi level and add the two values together to get Vbi Vbl -0.773 V Vbi - 0.814 V Vbl -0.796 V Vbi = 0.856 V
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Given data Nd 1x107 cm Na 5x106 cm T 300 K 3 fol si diode pn junctio... View full answer
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