Question $2(1$ point$)$

$$

A pn step junction is fabricated in silicon with an antimony concentration of $1$ x $1015$ cm$-3$ on one side and a gallium concentration of $3$ x $1014$ cm$-3$ on the other.$$ The junction operates at a temperature of $320$ K$.$ Assuming total ionization, find the build$-$in voltage Vbi.$$

Question $2$ options:

$0\mathrm{.}518$ V

$0\mathrm{.}361$ V

$0\mathrm{.}172$ V

$0\mathrm{.}431$ V

$0\mathrm{.}254$ V

$0\mathrm{.}136$ V