QUESTION $2$ Near room temperature $(290K)$ silicon has an intrinsic$-$carrier concentration of $n_1={10}^{10}c{m}^{-3}.($a$)$ Estimate the hole and electron concentrations in silicon at this temperature if the $-$material contains acceptor impurities at a concentration of $N_a=2{10}^{14}c{m}^{-3}$ and a negligible quantity of donor impurities. Is this material intrinsic at $290K.($b$)$ If the temperature is increased to $573K,$ the intrinsic carrier concentration increases approximately $n_i=3{10}^{15}c{m}^{-3}.$ Assuming the same impurity concentrations as in $($a$),$ estimafe the hole and electron concentrations. Is this material intrinsic or extrinsic at this temperature $(573K),(\frac{20}{100})$