Question 3: a) Assuming a temperature of absolute zero and the momentum of an electron traveling in a 2D conductor is given by P = 10 (E E.) ). The conductor has a width of 80 nm and is used as a channel in a nanotransistor. Design the required channel length, so that electrons spend 0.4 fs inside the channel at a current of 4 mA and a total resistance of 2 k12. (Please show and explain all the steps used in your design, you may assume ( 0 = 1 x 10-9s/m) and the transistor is operating at the edge of saturation). [10 points] b) Assuming that = 1, calculate AV (the change in the gate voltage) that is required to increase the number of electrons in a channel by a factor of eight, at T = 330K. [10 points) Question 3: a) Assuming a temperature of absolute zero and the momentum of an electron traveling in a 2D conductor is given by P = 10 (E E.) ). The conductor has a width of 80 nm and is used as a channel in a nanotransistor. Design the required channel length, so that electrons spend 0.4 fs inside the channel at a current of 4 mA and a total resistance of 2 k12. (Please show and explain all the steps used in your design, you may assume ( 0 = 1 x 10-9s/m) and the transistor is operating at the edge of saturation). [10 points] b) Assuming that = 1, calculate AV (the change in the gate voltage) that is required to increase the number of electrons in a channel by a factor of eight, at T = 330K. [10 points)