Question 3 In the circuit below, Node A is connected to a 5 micro Farad capacitive load. The other terminal of the transistor is connected to ground. The transistor's parameters are the following: mobility is 500 cm^2/(Vs), channel width is 180 nanometers, channel length is 90 nanometers. The oxide thickness is 3 nm and the oxide's dielectric constant is 10. The threshold voltage of the transistor is -1V. 1 = 0 and y = 0. Assume that the intrinsic time constants of the circuit as must smaller than the time variation of the voltage VB. If the voltage applied to the gate Vo=4 V and the voltage applied to node B is 6 sin(2* pi*t) V, write down the voltage at node A at times in the box below): (a) 0.5 s (b) 0.625 s (c) 1s (d) 1.125 s (e) 1.375 s (f) 1.75 s V! VG 1 A Question 3 In the circuit below, Node A is connected to a 5 micro Farad capacitive load. The other terminal of the transistor is connected to ground. The transistor's parameters are the following: mobility is 500 cm^2/(Vs), channel width is 180 nanometers, channel length is 90 nanometers. The oxide thickness is 3 nm and the oxide's dielectric constant is 10. The threshold voltage of the transistor is -1V. 1 = 0 and y = 0. Assume that the intrinsic time constants of the circuit as must smaller than the time variation of the voltage VB. If the voltage applied to the gate Vo=4 V and the voltage applied to node B is 6 sin(2* pi*t) V, write down the voltage at node A at times in the box below): (a) 0.5 s (b) 0.625 s (c) 1s (d) 1.125 s (e) 1.375 s (f) 1.75 s V! VG 1 A