Question 35 0/1 pts What would be a purpose for a thin oxide layer covering the Si surface prior to ion implant? It blocks the implant to protect the Si surface from ionic bombardment The oxide keeps the wafer from fracturing during the energetic implant process It serves as a screen oxide that will cause the dopant to go shallower in the Si It helps repel negative ions due to it's dielectric nature, keeping the wafer cleaner than would otherwise be possible Actually, an oxide isn't permitted in the implanter. The wafer must be bare Si, or else no implant will take place