Question $4$

A Si crystal has been doped with $\backslash (1\backslash$times $10^\{17\}\backslash$mathrm$\{$~cm$\}^\{-3\}\backslash )$ of As atoms, where is the Fermi level in this sample at $300$ K with respect to the Fermi level in intrinsic silicon? $($Hint: see Kasap Example $5\mathrm{.}6)$ The correct answer is$,$

the Fermi level of this doped silicon is $0\mathrm{.}312$ eV above the Fermi level in intrinsic silicon,

the Fermi level of this doped silicon is $0\mathrm{.}417$ eV above the Fermi level in intrinsic silicon,

the Fermi level of this doped silicon is $0\mathrm{.}417$ eV below the Fermi level in intrinsic silicon,

the Fermi level of this doped silicon is $0\mathrm{.}221$ eV above the Fermi level in intrinsic silicon,