Question #$7$: NMOS gate V$=1$V$,$ K$=$ K$2=2$ mA$/$V$^2,$ K$3=0\mathrm{.}2$mA$/$V$2,$ CL $=100$ PF$,$ VDD $=5$V$.$ IDS $=$ K$/2*($Vgs $-$ VT$)2$; IDS $=$ K$[($Vgs $-$ VT$)*$VDS $-$ VDS$^2/2]$ Vds Vgs$-$VT $[($Vgs$-$VT$)^2-2*$IDS$/$K$]1/2$ Vdd Q$3$ Vo $100$ pF VIA Q$2$ VIB Q$1$ a$.$ What is IDS for Q$1?$ b$.$ What is approximate VOH? c$.$ What is VOL, assume Q$1,$ Q$2$ are OHMIC and the gate is driven by NMOS technology? d$.$ What is VDS for Q$1?$ e$.$ What is t of the output voltage $(80\%$ to $20\%$ of VOH$)$ if VIA and Vis receive a OV to VOH Step with a $0$ rise time