A silicon thin film can be grown in the following three film deposition methods: Electron-beam evaporation...

  

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A silicon thin film can be grown in the following three film deposition methods: Electron-beam evaporation with a small 10 cm? area Si source, the distance from the source to substrate is 5 cm and the normal of the substrate surface is (I) 45° degree to the normal of the source surface. The substrate temperature is at 900 °C, the chamber pressure is 10° torr and the silicon evaporant flux is 1.5x107 atoms/cm2.sec. Sputter deposition with an Art ion flux of 7x108 ions/em?.sec on a silicon target and the sputter yield is 2.60% of the sputtered Si atoms are deposited on the substrate. The substrate temperature is at 900 °C and the chamber pressure is 10% torr. (II) then Chemical vapour deposition (CVD) with a SiCla source. The partial pressure of (III) SICI4 is 1 torr, the total pressure is 760 torr and the substrate temperature is 600 °C. Assume ks = 5x10ʻexp(- 1.2 eV/kT) cm/sec, hG = 5 cm/sec and the total number of molecules in the gas phase, Cr, is 3x10 molecules/cm. (a) Calculate the growth rate for each of the three methods (i.e. evaporation, sputter deposition, CVD). Assume N = 5x1022 atoms/cm for Si. (b) Which of the three methods (evaporation, sputter deposition, CVD) is most likelv to nroduce an enitaxial Si film? Explain vour answer. A silicon thin film can be grown in the following three film deposition methods: Electron-beam evaporation with a small 10 cm? area Si source, the distance from the source to substrate is 5 cm and the normal of the substrate surface is (I) 45° degree to the normal of the source surface. The substrate temperature is at 900 °C, the chamber pressure is 10° torr and the silicon evaporant flux is 1.5x107 atoms/cm2.sec. Sputter deposition with an Art ion flux of 7x108 ions/em?.sec on a silicon target and the sputter yield is 2.60% of the sputtered Si atoms are deposited on the substrate. The substrate temperature is at 900 °C and the chamber pressure is 10% torr. (II) then Chemical vapour deposition (CVD) with a SiCla source. The partial pressure of (III) SICI4 is 1 torr, the total pressure is 760 torr and the substrate temperature is 600 °C. Assume ks = 5x10ʻexp(- 1.2 eV/kT) cm/sec, hG = 5 cm/sec and the total number of molecules in the gas phase, Cr, is 3x10 molecules/cm. (a) Calculate the growth rate for each of the three methods (i.e. evaporation, sputter deposition, CVD). Assume N = 5x1022 atoms/cm for Si. (b) Which of the three methods (evaporation, sputter deposition, CVD) is most likelv to nroduce an enitaxial Si film? Explain vour answer.