QUICK RESPONSE WILL BE HIGHLY APPRECIATED AS I HAVE TO PREPARE FOR THE MIDTERM.

THIS QUESTION IS FROM THE COURSE MSE 342- MATERIALS PROCESSING 1 OF Materials Science and Engineering.

As discussed in class, an important transformation is the oxidation of Si to form a layer of SiO2. Please answer the following problems. 1. When is the layer growth diffusion controlled and when is it reaction controlled? Justify your answer. 2. Identify the parabolic rate constant and identify the linear rate constant for the growth of the SiO2layer at fixed temperature. 3. In the development of the growth law for this system, experiments verify that the O2diffuses through the SiO2, there is no reaction of the O2in the SiO2layer and there is no diffusion of Si into the SiO2. What would need to be changed in the model if these conditions were not obeyed? (Such differences might be relavent in another oxide forming system.)