Question: Say we have a silicon p n junction (A = 104 cm2 ) which has the following properties at T=300K: NA = 1018cm3 and ND
Say we have a silicon p n junction (A = 104 cm2 ) which has the following properties at T=300K: NA = 1018cm3 and ND = 2.5 1016cm3 and carrier lifetime n = 10ns, p = 100ns. The intrinsic carrier concentration and relative permittivity for Si are 1.51010cm3 and 11.7, respectively. Please assume that doping levels do not create any degenerate condition. Hence, the basic equation for built-in potential/Fermi level can be used to solve the
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