Simulation $4.$ MOSFET $(10$p$)$

The goal of this simulation is to build MOSFET I$-$V curves $($output characteristics$)$ for different values of the MOSFET parameters, compare and analyze them.

Make a circuit with a PMYS enhancement mode transistor and two voltage sources. Do a DC sweep analysis, like we dist in the class, to obtain the output I$-$V characteristics. Select appropriate range for the sweep. This will be your base simulation showing output I$-$V curves. Use the following parameter in your simulation, $K_P=500u\frac{A}{V^2}$ and $V_T=-2V.$

Starting from the base simulations, one by one change MOSFET parameters: $K,V_T,,,$ and produce four new output characteristics. Each simulation should have only one parameter changed with respect to the base simulation. Experiment with the size of the parameter change to achieve about $20\%$ change in IV curves. If you run multiple tries, then show only the final result. Their should be two curves on each graph, the original result, from $1,$ and a curve showing a $20\%$ change in I$-$V due to the parameter change.

Analyze the simulation results and describe what happens to I$-$V curves in each case and why.

Add a resistor, $R=1k,$ to the output loop and do DC sweep to construct the voltage transfer curve. See the slides for reference on how to place the resistor. You will measure the output voltage, $V_{sp}$ and evaluate the gain of the transistor.

Instructions.

Use a transistor from Transistors$/$TRANSISTORS$\_$VIRTUAL for your simulation.

Keep in mind, that for PMOS, all voltages and currents are inverse of NMOS, so you need to correctly assign the sign of $V_{Ds}$ and $V_{Gs}$ when doing simulations.

Your submission should include schematics and $6$ graphs: The original simulation from part $1,$ one for each set of parameters in part $2$ and additional one for the voltage transfer curve from part $4.$ Each graph should be clearly marked with the values of parameters in that simulation.

Show the simulation