Sketch the energy band diagram of a p-n junction in the steady-state, indicating the barrier Vo...
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Sketch the energy band diagram of a p-n junction in the steady-state, indicating the barrier Vo and the Fermi level: i) With no bias applied ii) With a voltage of +V applied iii) With a voltage of -V applied (b) In equilibrium, explain how the barrier forms in terms of the carrier currents. (c) Under forward bias, describe the change in minority carrier concentration on either side of the junction and the change in the depletion layer width. (d) A Si p-n junction has an acceptor dopant concentration N₁ = 10¹6 cm³ in the p region and a donor dopant concentration of Na= 10¹6 cm³ in the n region. Assuming the semiconductor is non-degenerate, so that np = n/² and that at room temperature (300 K) n; = 10¹0 cm3 and all the dopants are fully ionised, calculate the junction barrier voltage at 300 K (give the answer in volts to two decimal places). (e) Will the barrier increase or decrease with temperature? Give a reason for your answer. Sketch the energy band diagram of a p-n junction in the steady-state, indicating the barrier Vo and the Fermi level: i) With no bias applied ii) With a voltage of +V applied iii) With a voltage of -V applied (b) In equilibrium, explain how the barrier forms in terms of the carrier currents. (c) Under forward bias, describe the change in minority carrier concentration on either side of the junction and the change in the depletion layer width. (d) A Si p-n junction has an acceptor dopant concentration N₁ = 10¹6 cm³ in the p region and a donor dopant concentration of Na= 10¹6 cm³ in the n region. Assuming the semiconductor is non-degenerate, so that np = n/² and that at room temperature (300 K) n; = 10¹0 cm3 and all the dopants are fully ionised, calculate the junction barrier voltage at 300 K (give the answer in volts to two decimal places). (e) Will the barrier increase or decrease with temperature? Give a reason for your answer.
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Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, ? Paul J. Hurst Stephen H. Lewis, ? Robert G. Meyer
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