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Assignment $8\mathrm{.}1$

An n$-$type GaAs sample has a minority carrier lifetime of ${}_p=2{10}^{-7}s.$ Incident light with a wavelength of $=750nm$ generates an excess carrier concentration of $p=5{10}^{15}c{m}^{-3}$ at the surface of the semiconductor. Use the absorption coefficient data from Figure $14\mathrm{.}4$ of the textbook, $($a$)$ Determine the incident light intensity $I_v.($b$)$ At what distance in the semiconductor does the generation rate drop to $1\%$ of that at the surface?