# Suppose we have a nMOSCAP made of Si. Suppose the channel doping is too strong at p

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## Question:

- Suppose we have a nMOSCAP made of Si. Suppose the channel doping is too strong at p = 1019 cm-3. All plots should assume the metal is on the left side.
- For this problem, we apply Vgs = Vth.
- (a) Plot metal and depletion region charge densities. Label local extrema and depletion region edges. Hint: what polarity of charge exists on the metal with a positive voltage?
- (b) Plot electric field; positive values mean pointing to the right. Label local extrema and depletion region edges. Warning: Si permittivity > SiO2 permittivity.
- (c) Plot electric potential, assuming the source is grounded. Label local extrema and depletion region edges.

**Related Book For**

## Mathematical Statistics With Applications In R

ISBN: 9780124171138

2nd Edition

Authors: Chris P. Tsokos, K.M. Ramachandran