Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to...

 

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Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to 3.2 x 1017 cm-3 while the n-type Si is doped to 1018 cm-3. All plots should assume the p-type is on the left side. (a) Draw the energy band diagram at zero bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vapp and built-in voltage Vbi. Preserve the xp and xn relative scaling from question 2. (b) Draw the energy band diagram at forward bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vapp and built-in voltage Vbi. Take into account the change in xp and xn from part (a). Make sure the forward bias can turn on the diode, i.e. -0.6 V. (c) Draw the energy band diagram at reverse bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vapp and built-in voltage Vbi. Take into account the change in xp and xn from part (a). Use a reverse voltage that is roughly three times larger than the bandgap. Relative scale: V [V] x [um] Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to 3.2 x 1017 cm-3 while the n-type Si is doped to 1018 cm-3. All plots should assume the p-type is on the left side. (a) Draw the energy band diagram at zero bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vapp and built-in voltage Vbi. Preserve the xp and xn relative scaling from question 2. (b) Draw the energy band diagram at forward bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vapp and built-in voltage Vbi. Take into account the change in xp and xn from part (a). Make sure the forward bias can turn on the diode, i.e. -0.6 V. (c) Draw the energy band diagram at reverse bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vapp and built-in voltage Vbi. Take into account the change in xp and xn from part (a). Use a reverse voltage that is roughly three times larger than the bandgap. Relative scale: V [V] x [um]