Question: The diffusion component of the current is expected to dominate in silicon diodes at sufficiently elevated temperatures. Determine the temperature at which I _ diff

The diffusion component of the current is expected to dominate in silicon diodes at sufficiently elevated temperatures. Determine the temperature at which I_diff = I_R-G at a reverse bias of V_bi-V_A=V_BR/2(Hint: V_BR can be approaximated by 60((E_G/1.1)^(3/2))((10^16/N_B)^(3/4))) Solve for a n+-p step junction diode with N_A=2\times 10^16 cm-3,0=n , and Ln =80m. Please give me step by step calculations.

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