The electron concentration in a uniformly, lightly doped N type silicon t room temperature varies linearly with 10^17 cm^3 at x=0 to 6×10^16 cm^3 at x=2 micron. Electron are supplied to keep this concentration with time. Calculate the electron current density in Si if no electric field is present. (Assuming mobility of electron to be 1000cm^2V^-1sec at 300k and Boltzmann constant 8.62×10^-5eV.    

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Given ntype silicon T 300k concentration X0 16 at x 2m 6 X ... View the full answer