The p-type region of a silicon p-n junction is doped with 10^16 boron atoms per cubic...

 

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The p-type region of a silicon p-n junction is doped with 10^16 boron atoms per cubic centimetre and the n-type region is doped with 10^18 phosphorus atoms per cubic centimetre. Assume a step p-n junction and that all doping atoms are ionised. The intrinsic carrier concentration in silicon at 300 K is 1.5 X 10^10cm-3. (a) what are the electron and hole concentration in the p- and n-type regions at thermal equilibrium? (b) Calculate the built-in voltage Vbt at 300K (c) Calculate the width of the depletion region at 300k (The relative permittivity of Si is 11.7) (d) A typical thickness of c-Si wafers is 300 m. What % of the wafer thickness does the depletion region (aka space-charge region) represent? (e) Calculate the maximum electric field The p-type region of a silicon p-n junction is doped with 10^16 boron atoms per cubic centimetre and the n-type region is doped with 10^18 phosphorus atoms per cubic centimetre. Assume a step p-n junction and that all doping atoms are ionised. The intrinsic carrier concentration in silicon at 300 K is 1.5 X 10^10cm-3. (a) what are the electron and hole concentration in the p- and n-type regions at thermal equilibrium? (b) Calculate the built-in voltage Vbt at 300K (c) Calculate the width of the depletion region at 300k (The relative permittivity of Si is 11.7) (d) A typical thickness of c-Si wafers is 300 m. What % of the wafer thickness does the depletion region (aka space-charge region) represent? (e) Calculate the maximum electric field

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