The resistivity of an intrinsic germanium at 30 0 C is 0.4 -m. Calculate the intrinsic carrier

1. The resistivity of an intrinsic germanium at 30⁰C is 0.4 Ω-m. Calculate the intrinsic carrier density n at 30⁰C. Given that electron mobility is 0.38m²/V-s and the hole mobility is 0.18m²/V-s.
   
Find the conductivity of intrinsic silicon at 300K. Given that :
• n_i at 300K is 1.5/cm³
• the mobility of electrons and holes inF silicon are 1300 cm²/V-s respective and
• the number of Si atoms per cubic cm equals 5.
• If donor type impurity is added to the extent of one atom per 10⁸ silicon atoms, find the conductivity.
• If acceptor atoms are added to the extent of one impurity per 10⁸ silicon atoms, find the conductivity.
  
1. Find resistivity of intrinsic germanium at 300K .Given that:
2. n_i at 300K is /cm³
3. the mobility of electrons and holes in germanium are 3800 cm²/V-s and 1800 cm²/V-s respectively.
4. The number of Ge atoms per cubic cm equals 4.42.

ii) If donor impurity is added to an extent of one atom per 5germanium atom, find the resistivity.

iii). If acceptor impurity is added to the extent of one impurity atom per 2germanium atom, find the resistivity



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