Question: THEME: RF circuit representations Problem 1 : ABCD parameter matrix Figure 1 shows the circuit with series impedance Z and shunt admittance Y . If

THEME: RF circuit representations
Problem 1: ABCD parameter matrix
Figure 1 shows the circuit with series impedance Z and shunt admittance Y. If the series
impedance Z comprises a 1k resistor in series with a 1 mH inductor and the shunt
admittance Y comprises a 1 mS resistor in parallel with a 1F capacitor, find the [ABCD]
parameter matrix of this circuit.
Problem 2: ABCD parameter matrix
Find the ABCD parameter matrix for a lossless transmission line of length lm and
characteristic impedance Z0 as shown in Figure 2. Then, calculate the values of the
parameters of the ABCD matrix for l=4 and Z=100.
Figure 2: Lossless transmission line
Problem 3: S parameter matrix for series impedance
Find the [S] parameter matrix for the series impedance Z=3+j4k shown in Figure 3.
Use the system reference load impedance of Zn=50 in the calculation.
Problem 4: S parameter matrix for resistive circuit
Find the S parameter matrix for the two-port resistive network shown in Figure 4. Use
the system reference load impedance of Z0=50 in the calculation.
[ABCD] parameter matrix of the network.
[S]=[-0.20.40.4-0.3]
THEME: RF Oscillator Design
RF transistor oscillator:
Design the transistor oscillator at 10 GHz using the GaAs FET in a common-gate (CG) configuration with [S] parameter matrix at 10 GHz as follows:
[S]=[2.18?-351.26?182.75?960.52?155]
An inductor LG=5nH is placed in series with the gate (G) to increase positive feedback and sustain the unstable, oscillatory behavior.
Deliverable:
Word-formatted report, submitted to Blackboard, with the following evidence.
(a) Design steps of the complete circuit
(b) Complete circuit diagram with labels
Optional submission:
(c) Altium/Pspice diagram of the simulated oscillator circuit, and
(d) Test and evaluation (in Altium/Pspice) of the oscillator circuit.
THEME: RF Oscillator Design
RF transistor oscillator:
Design the transistor oscillator at 10 GHz using the GaAs FET in a common-gate (CG) configuration with [S] parameter matrix at 10 GHz as follows:
[S]=[2.18?-351.26?182.75?960.52?155]
An inductor LG=5nH is placed in series with the gate (G) to increase positive feedback and sustain the unstable, oscillatory behavior.
Deliverable:
Word-formatted report, submitted to Blackboh-d, with the following evidence.
(a) Design steps of the complete circuit
(b) Complete circuit diagram with labels
Optional submission:
(c) Altium/Pspice diagram of the simulated oscillator circuit, and
(d) Test and evaluation (in Altium/Pspice) of the oscillator circuit. Solve this question in detail, step by step,but make sure it is 100% correct
THEME: RF circuit representations Problem 1 :

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