Question: This question is related to embedded systems Consider an NMOS transistor in 180nm process with W/L =0.36/0.18m. In this process, the gate oxide thickness is

This question is related to embedded systems
This question is related to embedded systems Consider an NMOS transistor in

Consider an NMOS transistor in 180nm process with W/L =0.36/0.18m. In this process, the gate oxide thickness is 40A. The high-field mobility of electrons, n is assumed to be 180cm2/V at 70C, threshold voltage, Vtn=0.4V and ox=3.98.851014F/cm. Plot Idsvs. Vds for Vgs=0,1.2 and 1.8V

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