Question: Unless otherwise specified, assume Si is the semiconductor and is at room temperature (300 K). For Si, the bandgap is E-1.10 eV with effective

Unless otherwise specified, assume Si is the semiconductor and is at room

Unless otherwise specified, assume Si is the semiconductor and is at room temperature (300 K). For Si, the bandgap is E-1.10 eV with effective masses of me/m -1.08 and m/m -0.60, and effective densities of states at room temperature of N (300) -2.82 x 10 cm and N, (300) 1.17 x 10 cm. (Note: The effective mass of an electron is complicated... you have to use me/m-0.26 to get the correct N(T). See the notes. 1. Under appropriate conditions, the E-k relationship in a ID crystal might be described by the relationship E(k)-C(1-coska)-EC(1-cos ka) where k is the wave vector with -x/a

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