Use the Java program of Fig. 9.10 to answer the following questions: a. In Si at T = 300K, with As as a donor, what is the approximate doping concentration where the ionized fraction of As atoms falls to 50%? b. Similarly, for p-type Si doped with B, what is the doping at which the ionized fraction falls to 50%? c. If the acceptor is In, at what concentration does the ionized fraction fall to 50%?

2. a. Use the Java program of Fig. 9.10 to answer the following questions: In Si at T = 300K, with As as a donor, what is the approximate doping concentration where the ionized fraction of As atoms falls to 50%? b. Similarly, for p-type Si doped with B, what is the doping at which the ionized fraction falls to 50%? If the acceptor is In, at what concentration does the ionized fraction fall to 50%? C. 2. a. Use the Java program of Fig. 9.10 to answer the following questions: In Si at T = 300K, with As as a donor, what is the approximate doping concentration where the ionized fraction of As atoms falls to 50%? b. Similarly, for p-type Si doped with B, what is the doping at which the ionized fraction falls to 50%? If the acceptor is In, at what concentration does the ionized fraction fall to 50%? C