Use the Semiconductor Statistics spreadsheet to complete the following. Bring up the Carrier Conc. vs. T sheet and set the Options on the dialog as follows: ND = 11015 cm-3 , NA = 21014 cm-3 , ionization energy of (both donor and acceptor) impurity = 0.050 eV, select Si as the material and check the "Include temperature dependence of parameters", and uncheck both "Show approximations" and "Linear y-axis" boxes. Set the scale from 0 to 1000 K. a) For this specific case, room temperature (300 K) lies in which one of these three regimes? intrinsic, extrinsic/exhaustion, or freeze-out? Justify your answer, based on the plot (attach a print-out of the plot to help do this). Note that each regime is color coded (although you should be able to answer this without using this code!) (Check "Linear y-axis" box)