Question: We deposit a metal with a work function of 4 . 6 eV on Si ( electron affinity of 4 eV ) with an acceptor

We deposit a metal with a work function of 4.6 eV on Si (electron affinity of 4 eV) with an acceptor doping level of 1018 cm-3. Is this a Schottky diode or ohmic contact, and why? By how much should the metal function be altered to change the type of contact?

Step by Step Solution

There are 3 Steps involved in it

1 Expert Approved Answer
Step: 1 Unlock blur-text-image
Question Has Been Solved by an Expert!

Get step-by-step solutions from verified subject matter experts

Step: 2 Unlock
Step: 3 Unlock

Students Have Also Explored These Related Electrical Engineering Questions!

Q:

The Tokyo Olympics After watching How the Tokyo Olympics Became the Most Expensive Summer Game Ever video answer the following questions. * * The numbers can be made up . I just need help with an...

Q:

Consider an ideal metal-semiconductor junction between p-type silicon and polycrystalline aluminum. The S i is doped with N A = 5 10 16 cm -3 . The metal work function is 4.28 eV and the Si electron...

Q:

Streetman 6 th 5 . 4 0 modified ) A Schottky barrier is formed between a metal having a work function of 4 . 3 eV and p - type Si ( electron affinity = 4 eV ) . The acceptor doping in the Si is 1 0 1...

Q:

2 5 . ( 2 0 points ) Metal - Semiconductor junctions ( a ) UNBIASED, CASE \ # 1 : On a graph paper ( or else using a ruler to be quantitatively accurate ) draw a band diagram of a metal -...

Q:

1. The diagram above shows three energy levels of a hypothetical atom. The lowest available energy level is E1 = -5.0 eV. E, = -5.0CV a) Draw arrows on the above diagram showing all possible photon...

Q:

I was wondering about the answers for the last 2 concluding questions. electron he Physics 30: Name:_ Negar Fathi 3) Create a graph of the kinetic energy in (ev) of the photoelectrons as a function...

Q:

Hand written response please: 3. Consider a Schottky contact between gold and n-type Si which has a uniform doping density of ND = 5.0 x 1015 cm-3. The work function of gold is pm = 5.1 V and the...

Q:

2. Consider a Si pin junction at room temperature. The n-type region is infinitely long, has a doping density of ND = 1.0 x 1016 cm and the minority carrier (hole) lifetime To = 106 s. The p-type...

Q:

An Aluminum - S i O 2 - S i MOS structure is given. Assuming the electron affinity of Si is 4 . 1 eV , the electron affinity of S i O 2 is 0 . 9 eV , and the work function of Si is 4 . 1 5 eV ,...

Q:

Objectives: The purpose of this Laboratory is to investigate the phenomenon of the Photoelectric Effect using a computer simulation software. Equipment: Scientific Calculator . Computer with MS Excel...

Q:

Tungsten was brought in contact onto a piece of an n - type Si with a donor doping of 1 0 1 6 cm - 3 . The metal - semiconductor contact was at 2 5 0 K at all times. Assume that silicon s energy gap...

Q:

The Three Cultures Model includes which three cultures: Direct, organizational, strategic External, organizational, internal Outside, middle, inside External, organizational, leader

Q:

The flexible-budget variance for materials is $5,000 (U). The sales-volume variance is $13,000 (U). The price variance for material is $31000 (F). The efficiency variance for direct manufacturing...

Q:

8. What account balances or other amounts are included on two different financial statements for the period? Which statements are involved?

Q:

Kaif Consider an economy with three consumers, each with a marginal benefit for a public good of MB = 10-q. If the marginal cost of providing the good is $9 per unit, what is the efficient level of...