Question: We plan on using thermal evaporation chamber to grow a metal alloy ( thin film ) with C u 2 . 0 w t %

We plan on using thermal evaporation chamber to grow a metal alloy (thin film) with
Cu2.0wt%(weight percent) and Al98.0wt%. Source temperature is controlled at
1350K. Please estimate what the target concentrations (weight percent) are in order to
maintain the right alloy composition. (Vapor pressure for Al at 1350K is 10-3 torr, and
for Cu at 1350K is 210-4 torr. Note that if we change the source temperature for growing
this alloy, the target concentration needs an adjustment based on their vapor pressure
variations.)
 We plan on using thermal evaporation chamber to grow a metal

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