We saw that in a heterojunction in which the spike and notch occurred in the conduction band (as in Figure 6.12), it was possible for electrons in the valence band of the narrow-gap material to tunnel a short distance into the forbidden band of the wide-band-gap material. This tunneling induced a dipole that produced a discontinuity in the bands at the junction. Consider a Pn heterojunction such as that in Figure P6.3. Comment on the possibility of tunneling-induced dipoles in this case.

Figure P6.3

Figure 6.12 Equilibrium energy band diagram of an arbitrary Type I Np heterojunction as predicted by the electron affinity model. Electrons from the valence band of semiconductor B can tunnel a short distance into the forbidden gap of A, thus creating an interfacial dipole.

  

Transcribed Image Text:

Egl Δέν ΙΔΕΣ Notch Eg2 -Spike Evac Ec Ef Ev Egl Δέν ΙΔΕΣ Notch Eg2 -Spike Evac Ec Ef Ev

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In the PN heterojunction shown in Figure P63 tunnelinginduced dipoles are not possible This is because the conduction and valence bands of the two mat... View the full answer